A ferroelectric tunnel junction (FTJ) consists of two metal electrodes separated by a nanometre-thick ferroelectric barrier layer, as illustrated in Figure 1a.

Ferroelectric tunnel junction enables superior neuro-inspired computing. University of Science and Technology of China. Journal Nature Communications DOI 10.1038/s41467-022-28303-x. Keywords ...

“Surprisingly, not only the component of the tunnel junction resistance that depends on the direction of the polarisation, but also the component that usually only depends on the direction of the ...

Information is written by applying an external electric field, which changes the direction of the ferroelectric's polarization vector, and this in turn changes the shape of the potential barrier.

FTJ is a tunnel junction in which a thin ferroelectric film is sandwiched between two metal electrodes. The resistance is highly dependent on the polarization direction of the ferroelectric barrier.

The team engineered and tested improvements in the performance of a memory structure known as a ferroelectric tunnel junction. Share: Facebook Twitter Pinterest LinkedIN Email. FULL STORY.

A team of French scientists designed and built an artificial synapse, called a memristor, made of an ultrathin ferroelectric tunnel junction that can be tuned for conductivity by voltage pulses. The ...

Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a ...

A technical paper titled “Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators” was published by researchers at Lund University. Abstract: “Neuromorphic computing has seen ...

All the latest science news about ferroelectric tunnel junctions from Phys.org ...

In addition, he has theoretically elucidated scalability of ferroelectric tunnel junction (FTJ) memory with ferroelectric-HfO2 down to 20 nm diameter. Negative capacitance FET (NCFET) with a ...