With momentum building for Spin Transfer Torque MRAM (STT-MRAM) as the leading flavor of embedded MRAM technology, this white paper focuses on unique test challenges for STT-MRAM on-chip memory while ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

Since spin-transfer torque magnetoresistive RAM (STT-MRAM) only needs to power each bit of memory just during operation, it has a drastically reduced power consumption. Endoh’s team has ...

2. Fast Write Technology with Simultaneous Write Bit Number Optimization and Shortened Mode Transition Time Following the high-speed write technologies for embedded STT-MRAM announced in December 2021 ...

In the industrial context, spin transfer torque-MRAM (STT-MRAM) is a suitable candidate for demonstrating the benefits of such quantum metrology. STT-MRAM is a promising non-volatile, next ...

While the initial interest in the existing generation of MRAM—which is based on the spin-transfer torque (STT) effect in ferromagnetic tunnel junctions—was driven by its nonvolatile data retention and ...