Power Integrations, a maker of high-voltage ICs for energy-efficient power conversion, has appointed Jennifer A. Lloyd, as ...

Three-phase drive evaluation board uses radiation-hardened EPC7011L7C eGaN power stage EPC Space, a maker of ...

Northeastern University researchers have developed a new, lightweight plastic-ceramic composite that conducts heat and can be ...

Nordic Semiconductor has announced the new nPM1304 Power Management IC (PMIC). Building on the success formula of the ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Nexperia has announced two 1200V 20A SiC Schottky diodes designed to address the demand for ultra-low power loss rectifiers ...

Distributor Richardson Electronics has announced a technology partner agreement with Pakal Technologies, a US-based silicon ...

Singapore has opened the National Semiconductor Translation and Innovation Centre for GaN; the country's first national ...

For the last year Japanese chemical company Resonac and Tohoku University have been exploring using SiC powder, produced from ...

Troubled US SiC semiconductor company Wolfspeed has appointed Gregor Van Issum as CFO, effective September 1, 2025. He ...

Peter Dijkstra, Chief Commercial Officer at Trymax Semiconductor Equipment, discusses the landmark installation of the company’s 500th process chamber in Asia, marking strong progress toward the goal ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices ...