When I used your configuration for experiments on DOTAv1, the online validation map was only 73.54, which is far from the accuracy of 74.26 in your paper.This is my experimental log,can you help me ...

E/D mode GaN HEMTs and DCFL-based inverter were monolithically fabricated on Si-based GaN material. Selective barrier thinning method and MIS structure were used to realize GaN E/D mode HEMTs ...

This work demonstrates dynamic response characteristics of the tri-gate AlGaN/GaN high electron mobility transistor (HEMT) direct coupled FET logic (DCFL) inverter. The threshold voltage of the ...

演讲摘要 1. 氮化镓DCFL集成 2. 氮化镓CMOS集成 3. 西浦先进半导体研究中心简介 关于IPF2025 大会信息 ·时 间：2025年8月21-22日 ·地 点：江苏无锡梁鸿湿地丽笙度假酒店（江苏省无锡市飞凤路205号） ·会议规模：800~1000人 ...