The effectiveness of GaN-IC technology for power electronics depends on the seamless integration of high-power devices and peripheral circuits. Peripheral circuitry architecture dictates performance ...

E/D mode GaN HEMTs and DCFL-based inverter were monolithically fabricated on Si-based GaN material. Selective barrier thinning method and MIS structure were used to realize GaN E/D mode HEMTs ...

When I used your configuration for experiments on DOTAv1, the online validation map was only 73.54, which is far from the accuracy of 74.26 in your paper.This is my experimental log,can you help me ...