Memory technologies have seen rapid advancements as researchers strive to overcome the limitations of conventional systems. Magnetoresistive Random Access Memory (MRAM) stands out as a promising ...

It's sometimes referred to as Spin-Transfer Torque Magnetoresistive RAM (STT-MRAM). It utilizes magnetic tunnel junctions (MTJs) to store data by manipulating the electron spins. This results in ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

While the initial interest in the existing generation of MRAM—which is based on the spin-transfer torque (STT) effect in ferromagnetic tunnel junctions—was driven by its nonvolatile data retention and ...

Since spin-transfer torque magnetoresistive RAM (STT-MRAM) only needs to power each bit of memory just during operation, it has a drastically reduced power consumption. Endoh’s team has ...

The challenges of embedded memory test and repair are well known, including maximizing fault coverage to prevent test escapes and using spare elements to maximize manufacturing yield. With the surge ...

MTJs are the core elements of magnetic random-access memory (MRAM) and spin-transfer torque MRAM (STT-MRAM), which are non-volatile memory technologies with high speed, endurance, and scalability. The ...