The essential physics of the ferroelectric tunnel junction (FTJ) is assessed with technology computer-aided design (TCAD) simulations and analytical models. With experimental data calibrations, a TCAD ...

Conduction mechanisms of ferroelectric tunnel junction (FTJ) using metal-ferroelectric-insulator- semiconductor (MFIS) on n- and p-type semiconductor is clarified by a new developed model, which is ...

Ferroelectric tunnel junction (FTJ) memristors are prime candidates for this purpose, but the impact of the particular characteristics for their performance upon integration into large crossbar arrays ...

The ferroelectric tunnel junction (FTJ), a key element, plays a critical function in the larger field of memory technology. This component embodies the idea of ferroelectric memory, which uses ...

As soon as next month, work could begin on the first steps to create a two-track tunnel at the center of the Gateway project.

FTJs have gained significant attention as potential non-volatile memory devices. The structure of FTJs consists of metal electrodes on both sides and the intermediate ferroelectric tunnel barrier.

FTJ is a tunnel junction in which a thin ferroelectric film is sandwiched between two metal electrodes. The resistance is highly dependent on the polarization direction of the ferroelectric barrier.

Ferroelectric tunnel junction (FTJ) is a new candidate for memristor construction thanks to its stable data storage feature, but it fails to meet the desirable requirements in terms of endurance ...

Researchers at Toshiba Corporate R&D Center and Kioxia Corporation in Japan have recently carried out a study exploring the feasibility of using nonlinear ferroelectric tunnel junction (FTJ) ...

Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ...

To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable ...